Static and dynamic characterization of 6.5kV, 100A SiC Bipolar PiN Diode modules

Author

Elasser, Ahmed ; Agamy, Mohammed ; Nasadoski, Jeffrey ; Bolotnikov, Alexander ; Stum, Zachary ; Raju, Ravi ; Stevanovic, Ljubisa ; Mari, Jorge ; Menzel, Matthias ; Bastien, Bertrand ; Losee, Peter

Author_Institution

GE Global Res. Center, Niskayuna, NY, USA

fYear

2012

fDate

15-20 Sept. 2012

Firstpage

3595

Lastpage

3602

Abstract

High voltage and high current SiC bipolar diode modules are fabricated and characterized under static and dynamic conditions. The modules are built using 6×6mm² SiC chips that are fabricated on 3" SiC substrates. Individual chips were also packaged in an ISOPLUS™ package and used to perform switching tests on the diodes. The modules have been fully characterized under static and dynamic conditions. These modules are targeted for high voltage, high frequency applications, as well as antiparallel diodes for 6.5kV IGBTs, IGCTs, and IEGTs.

Keywords

modules; p-i-n diodes; power semiconductor devices; semiconductor device packaging; semiconductor device testing; silicon compounds; wide band gap semiconductors; ISOPLUS package; SiC; bipolar pin diode modules; current 100 A; dynamic characterization; static characterization; switching tests; voltage 6.5 kV; Insulated gate bipolar transistors; Leakage current; PIN photodiodes; Schottky diodes; Silicon; Silicon carbide; Switches; Bipolar Degradation; Bipolar Diodes; Current Sharing; High Voltage; PiN; Silicon Carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Energy Conversion Congress and Exposition (ECCE), 2012 IEEE

Conference_Location

Raleigh, NC

Print_ISBN

978-1-4673-0802-1

Electronic_ISBN

978-1-4673-0801-4

Type

conf

DOI

10.1109/ECCE.2012.6342485

Filename

6342485