Title :
130-GHz f/sub T/ SiGe HBT technology
Author :
Oda, K. ; Ohue, E. ; Tanabe, M. ; Shimamotot, H. ; Onai, T. ; Washio, K.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
A real emitter/base heterojunction was formed with the optimization of the vertical profile of the transistor, and good crystallinity of SiGe was achieved by using a UHV/CVD system with high-pressure H/sub 2/ precleaning of the substrate. As a result, a record cutoff frequency up to 130 GHz and the current gain up to 29,000 were obtained with a graded and uniform Ge profiles, respectively.
Keywords :
Ge-Si alloys; chemical vapour deposition; heterojunction bipolar transistors; semiconductor materials; semiconductor technology; surface cleaning; 130 GHz; SiGe; SiGe HBT technology; UHV/CVD system; crystallinity; current gain; cutoff frequency; emitter/base heterojunction; graded profile; high-pressure H/sub 2/ precleaning; substrate; uniform profile; vertical profile optimization; Capacitive sensors; Crystallization; Cutoff frequency; Epitaxial growth; Germanium silicon alloys; Heterojunction bipolar transistors; Laboratories; Silicon germanium; Substrates; Temperature;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650500
