DocumentCode
2000776
Title
Thermal behavior of IGBT subjected to short power pulses of high amplitude
Author
Rouve, L.L. ; Schaeffer, C. ; Farjah, E.
Author_Institution
Lab. d´´Electrotech. de Grenoble, France
fYear
1994
fDate
13-17 Feb 1994
Firstpage
487
Abstract
During operation, IGBT power switches can be subjected to destructive short power pulses of high amplitude. The aim of this paper is to study the IGBT´s thermal behavior due to such stresses. Thus, a thermal model is developed and then simulations and experimental results are compared. Also an analytical approach is described and first results about short-circuits are presented
Keywords
insulated gate bipolar transistors; power transistors; semiconductor device models; semiconductor switches; short-circuit currents; thermal analysis; IGBT power switches; destructive short power pulses; high amplitude power pulses; stresses; thermal behavior; Bipolar transistors; Insulated gate bipolar transistors; Integrated circuit modeling; Intrusion detection; MOSFET circuits; Temperature; Thermal conductivity; Thermal resistance; Thermal stresses; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Power Electronics Conference and Exposition, 1994. APEC '94. Conference Proceedings 1994., Ninth Annual
Conference_Location
Orlando, FL
Print_ISBN
0-7803-1456-5
Type
conf
DOI
10.1109/APEC.1994.316359
Filename
316359
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