DocumentCode
2000812
Title
An improved method for ultra fast recovery diode testing
Author
Catt, Jamie
Author_Institution
Int. Rectifier Corp., El Segundo, CA, USA
fYear
1994
fDate
13-17 Feb 1994
Firstpage
473
Abstract
Semiconductor manufacturers are expending a great deal of effort in designing ultra fast recovery diodes to complement high voltage, high current switching devices, such as IGBTs, that are available today. Circuit designers trying to use these diodes and semiconductor designers trying to evaluate new manufacturing processes are being misled by test results measured on test fixtures that have not changed for many years. These test fixtures were created when diode recovery parameters were many times higher than what is possible today. An evaluation of the testing of fast recovery epitaxial diodes (FRED) is carried out and a new test method is described
Keywords
power electronics; semiconductor device testing; semiconductor switches; HV; IGBTs; fast recovery epitaxial diodes; manufacturing processes; switching devices; test fixtures; ultra fast recovery diode testing; Circuit testing; Current measurement; Design engineering; Fixtures; History; Inductors; Rectifiers; Semiconductor device testing; Semiconductor diodes; Shunt (electrical);
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Power Electronics Conference and Exposition, 1994. APEC '94. Conference Proceedings 1994., Ninth Annual
Conference_Location
Orlando, FL
Print_ISBN
0-7803-1456-5
Type
conf
DOI
10.1109/APEC.1994.316361
Filename
316361
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