Title :
A selective-epitaxial SiGe HBT with SMI electrodes featuring 9.3-ps ECL-gate delay
Author :
Washio, K. ; Ohue, E. ; Oda, K. ; Tanabe, M. ; Shimamoto, H. ; Onai, T.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
A selective-epitaxial SiGe base heterojunction bipolar transistor (HBT) with self-aligned stacked metal/IDP (SMI) electrodes is proposed. The SiGe-base structure, self-aligned to the 0.1-/spl mu/m-wide emitter, effectively reduces collector capacitance and SMI electrodes provide low parasitic resistances. A BPSG/SiO/sub 2/-refilled trench was introduced to reduce the substrate capacitance. A 9.3-ps delay time in a differential ECL ring oscillator was achieved.
Keywords :
Ge-Si alloys; delays; emitter-coupled logic; heterojunction bipolar transistors; semiconductor device metallisation; semiconductor epitaxial layers; semiconductor materials; 9.3 ps; BPSG/SiO/sub 2/-refilled trench; SMI electrode; SiGe; collector capacitance; differential ECL ring oscillator; gate delay; heterojunction bipolar transistor; parasitic resistance; selective-epitaxial SiGe HBT; self-aligned stacked metal/IDP; substrate capacitance; Bipolar transistors; Delay effects; Electrodes; Germanium silicon alloys; Heterojunction bipolar transistors; Millimeter wave technology; Parasitic capacitance; Silicon germanium; Substrates; Tungsten;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650501
