• DocumentCode
    2001145
  • Title

    Comparison of NMOS, CMOS and GaAs technologies

  • Author

    Goel, A.K. ; Kalia, A.

  • Author_Institution
    Dept. of Electr. Eng., Michigan Technol. Univ., East Lansing, MI, USA
  • fYear
    1989
  • fDate
    14-16 Aug 1989
  • Firstpage
    1238
  • Abstract
    The relative merits of silicon NMOS, CMOS, and GaAs technologies are discussed. The relative commercial standings of these IC technologies are discussed
  • Keywords
    CMOS integrated circuits; III-V semiconductors; MOS integrated circuits; elemental semiconductors; field effect integrated circuits; integrated circuit technology; silicon; CMOS; GaAs; IC technologies; NMOS; Si; monolithic IC; CMOS process; CMOS technology; Capacitance; Circuits; Energy consumption; Gallium arsenide; MOS devices; MOSFETs; Silicon; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 1989., Proceedings of the 32nd Midwest Symposium on
  • Conference_Location
    Champaign, IL
  • Type

    conf

  • DOI
    10.1109/MWSCAS.1989.102080
  • Filename
    102080
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2001145