Title :
Comparison of NMOS, CMOS and GaAs technologies
Author :
Goel, A.K. ; Kalia, A.
Author_Institution :
Dept. of Electr. Eng., Michigan Technol. Univ., East Lansing, MI, USA
Abstract :
The relative merits of silicon NMOS, CMOS, and GaAs technologies are discussed. The relative commercial standings of these IC technologies are discussed
Keywords :
CMOS integrated circuits; III-V semiconductors; MOS integrated circuits; elemental semiconductors; field effect integrated circuits; integrated circuit technology; silicon; CMOS; GaAs; IC technologies; NMOS; Si; monolithic IC; CMOS process; CMOS technology; Capacitance; Circuits; Energy consumption; Gallium arsenide; MOS devices; MOSFETs; Silicon; Voltage;
Conference_Titel :
Circuits and Systems, 1989., Proceedings of the 32nd Midwest Symposium on
Conference_Location :
Champaign, IL
DOI :
10.1109/MWSCAS.1989.102080
