• DocumentCode
    2001777
  • Title

    An accurate, low impedance, low dropout sub-V bandgap reference

  • Author

    Kin Keung Lau

  • Author_Institution
    HandHeld Power Design, Maxim Integrated, San Jose, CA, USA
  • fYear
    2013
  • fDate
    11-12 July 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A compact, accurate sub-1V low impedance, low dropout bandgap reference is presented in this paper. Firstly, a new 1V bandgap core (corel) is introduced by the simple addition of two resistors to the generic core. Using this concept, an improved version (core 2) is presented to generate a sub-1V(0.9V in the design example) bandgap reference that can be set from a bit above Vbe, up to the normal bandgap voltage. Both cores are in low dropout and low output impedance configurations. The circuit idea is realized in 90nm BiCMOS technology. Simulation results show that over a 200oC temperature range, core 1 can achieve 20ppm over line and load regulation. Core 2 can achieve 15ppm over line and load regulation. Both cores can be realized in a CMOS process using parasitic PNP devices.
  • Keywords
    BiCMOS integrated circuits; CMOS integrated circuits; energy gap; reference circuits; resistors; BiCMOS technology; bandgap core; line regulation; load regulation; low dropout bandgap reference; normal bandgap voltage; parasitic PNP devices; resistors; size 90 nm; sub-1V low impedance bandgap reference; voltage 0.9 V; Accuracy; BiCMOS integrated circuits; CMOS integrated circuits; CMOS process; Photonic band gap; Resistors; Simulation; Sub-1V; low dropout; voltage reference;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Signals, Circuits and Systems (ISSCS), 2013 International Symposium on
  • Conference_Location
    Iasi
  • Print_ISBN
    978-1-4799-3193-4
  • Type

    conf

  • DOI
    10.1109/ISSCS.2013.6651183
  • Filename
    6651183