Simulation, fabrication and characterization of high performance planar-doped-barrier sub 100 nm channel MOSFETs

Author

Ramgopal Rao, V. ; Hansch, W. ; Eisele, I.

Author_Institution

Fakultat fur Elektrotech., Univ. der Bundeswehr Munchen, Neubiberg, Germany

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

811

Lastpage

814

Abstract

In this paper we present experimental and simulation results on planar-doped-barrier MOSFETs (PDBFETs) and show the advantages that arise from the channel delta doping. Early and higher magnitude of velocity overshoot, suppression of avalanche multiplication, reduced hot-carrier problems are some of the advantages offered by PDBFETs over the conventional homogeneously doped MOSFETs in the sub 100 nm regime. Our low-temperature characterizations show clear ballistic transport in the fabricated 85 nm channel MOSFETs.

Keywords

MOSFET; characteristics measurement; doping profiles; hot carriers; molecular beam epitaxial growth; semiconductor device reliability; semiconductor doping; semiconductor growth; 85 nm; PDBFETs; avalanche multiplication; ballistic transport; channel delta doping; hot-carrier problems; low-temperature characterizations; planar-doped-barrier channel MOSFETs; velocity overshoot; Ballistic transport; CMOS technology; Doping profiles; Fabrication; Hot carriers; Hydrodynamics; MOS devices; MOSFETs; Molecular beam epitaxial growth; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.650505

Filename

650505