DocumentCode
2001856
Title
N-Way MMIC Redundant Switch
Author
Bahl, Inder J. ; Griffin, Edward L. ; Willems, David A.
Author_Institution
ITT Gallium Arsenide Technology Center, 7670 Enon Drive, Roanoke, VA 24019, USA
fYear
1988
fDate
12-15 Sept. 1988
Firstpage
1011
Lastpage
1016
Abstract
A novel approach to provide redundancy in an N-Way MESFET Switch has been invented and realized with monolithic microwave integrated circuit technology. This switch circuit uses series and shunt FETs configured in a manner to prevent failure of the switch even if several FETs fail. For example a SPDT redundant switch is capable of providing 1.3 dB insertion loss, and return loss and isolation better than 20 dB and 35 dB, respectively over dc to 12 GHz, even if 25% of the FETs fail in each arm.
Keywords
Costs; Equivalent circuits; FETs; Insertion loss; MMICs; Maintenance; Performance loss; RLC circuits; Switches; Switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1988. 18th European
Conference_Location
Stockholm, Sweden
Type
conf
DOI
10.1109/EUMA.1988.333942
Filename
4132630
Link To Document