• DocumentCode
    2001941
  • Title

    A 11 ppm/°c CMOS current reference circuit with no external components

  • Author

    Imbrea, Damian ; Cojan, Neculai

  • Author_Institution
    Fac. of Electron., Telecommun. & Inf. Technol., Gh. Asachi Tech. Univ. of Iasi, Iaşi, Romania
  • fYear
    2013
  • fDate
    11-12 July 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A new CMOS current reference circuit is described. The circuit designed in 65 nm CMOS standard process operates in the temperature range [-40...+130] °C with supply voltage from 2.1 V to 3.0 V. The reference current is 1 μA ± 0.9 nA having a line sensitivity of 0.5 nA/V and 200 dB power supply rejection ratio at low frequencies. No curvature compensation techniques are used. The circuit occupies 0.0091 mm2 silicon area.
  • Keywords
    CMOS integrated circuits; elemental semiconductors; integrated circuit design; silicon; CMOS current reference circuit; Si; circuit design; current 1 muA; power supply rejection ratio; size 65 nm; temperature -40 C to 130 C; voltage 2.1 V to 3.0 V; CMOS integrated circuits; Generators; Resistors; Sensitivity; Standards; Temperature sensors; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Signals, Circuits and Systems (ISSCS), 2013 International Symposium on
  • Conference_Location
    Iasi
  • Print_ISBN
    978-1-4799-3193-4
  • Type

    conf

  • DOI
    10.1109/ISSCS.2013.6651190
  • Filename
    6651190
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2001941