Title : 
A High Isolation DC to 18 GHz Packaged MMIC SPDT Switch
         
        
            Author : 
Ezzeddine, A. ; Pengelly, R. ; Badawi, H.
         
        
        
        
        
        
            Abstract : 
An high isolation MMIC GaAs SPDT switch was designed using a travelling wave configuration to achieve a very broadband performance from DC to 18 GHz. The SPDT switch die measurements give less than 2.5 dB insertion loss at 18 GHz and a return loss greater than 12 dB over the full bandwidth in both the ON and OFF states. The MMIC chip was packaged in a new 20 GHz package. The packaged switch has insertion loss of better than 3.1 dB an isolation higher than 34 dB at 18 GHz and a good match from DC to 18 GHz. The switch can handle an input power of 0.6 Watt from 1 GHz to 18 GHz.
         
        
            Keywords : 
Communication switching; FETs; Frequency; Gallium arsenide; Insertion loss; MMICs; Packaging; Shunt (electrical); Switches; Switching circuits;
         
        
        
        
            Conference_Titel : 
Microwave Conference, 1988. 18th European
         
        
            Conference_Location : 
Stockholm, Sweden
         
        
        
            DOI : 
10.1109/EUMA.1988.333945