Title :
Hole confinement and its impact on low-frequency noise in SiGe pFETs on sapphire
Author :
Mathew, S.J. ; Niu, G. ; Dubbelday, W.B. ; Cressler, J.D. ; Ott, J.A. ; Chu, J.O. ; Mooney, P.M. ; Kavanagh, K.L. ; Meyerson, B.S. ; Lagnado, I.
Author_Institution :
Dept. of Electr. Eng., Auburn Univ., AL, USA
Abstract :
We present the first investigation of hole confinement and its impact on low frequency noise in SiGe pFETs on sapphire. A secondary g/sub m/ peak observed at low temperatures (85 K) in SiGe pFETs is attributed to hole confinement in the SiGe channel, and is confirmed by 2-D simulations. The measured low frequency (1/f) noise in the SiGe pFETs is observed to be significantly lower than in the Si pFETs, which is partially the result of the band offset between the Si cap and SiGe channel.
Keywords :
1/f noise; Ge-Si alloys; hole mobility; microwave field effect transistors; microwave measurement; semiconductor device noise; semiconductor materials; 1/f noise; 85 K; SiGe; band offset; hole confinement; low-frequency noise; pFETs; secondary g/sub m/ peak; CMOS technology; Circuit noise; Frequency; Germanium silicon alloys; Lifting equipment; Low-frequency noise; MOSFETs; Microelectronics; Silicon germanium; Temperature;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650506
