DocumentCode
2002143
Title
Influence of thermal treatment on the charge stability of non-porous and porous polytetrafluoroethylene (PTFE) film electrets
Author
Qiu, Xunlin ; Xia, Zhongfu ; Wang, Feipeng ; Wirges, Werner ; Gerhard, Reimund
Author_Institution
Appl. Condensed-Matter Phys., Univ. of Potsdam, Potsdam, Germany
fYear
2010
fDate
4-9 July 2010
Firstpage
1
Lastpage
4
Abstract
Suitable thermal treatments can be used to modify the microstructure of polymer electrets, which in turn may lead to better electret properties. In this paper, non-porous and porous PTFE films are subjected to a thermal treatment consisting of heating at 320°C for 2 min followed by quenching in liquid nitrogen. The influence of such a treatment on the charge stability of the film electrets is studied by means of thermally stimulated surface-potential decay (charge-TSD) measurements. It is found that the charge stability is slightly reduced by the thermal treatment of non-porous PTFE film electrets, while better electret-charge stability is observed after the thermal treatment of porous PTFE film. The microstructural origin of the observed behavior is investigated and analyzed by means of differential scanning calorimetry (DSC), wide-angle X-ray diffraction (WAXD) and scanning electron microscopy (SEM).
Keywords
X-ray diffraction; crystal microstructure; dielectric thin films; differential scanning calorimetry; electrets; polymer films; porous materials; quenching (thermal); scanning electron microscopy; surface potential; charge stability; differential scanning calorimetry; microstructure; nonporous polytetrafluoroethylene film electrets; porous polytetrafluoroethylene film electrets; quenching; scanning electron microscopy; temperature 320 degC; thermal treatment; thermally stimulated surface-potential decay; time 2 min; wide-angle X-ray diffraction; Electrets; Heating; Polymers; Stability analysis; Surface treatment; Temperature measurement; Thermal stability;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid Dielectrics (ICSD), 2010 10th IEEE International Conference on
Conference_Location
Potsdam
Print_ISBN
978-1-4244-7945-0
Electronic_ISBN
978-1-4244-7943-6
Type
conf
DOI
10.1109/ICSD.2010.5568002
Filename
5568002
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