• DocumentCode
    2002422
  • Title

    Two-Dimensional Analysis of Slow-Wave Propagation in Submicronic MESFET

  • Author

    Benghalia, A. ; Bajon, V. ; Baudrand, H.

  • Author_Institution
    Laboratoire de microonade E.N¿.S.E.E.I.H.T.; 2, rue C. Camichel, 31071 TOULOUSE - FRANCE.
  • fYear
    1988
  • fDate
    12-15 Sept. 1988
  • Firstpage
    1163
  • Lastpage
    1168
  • Abstract
    An accurate two-dimensional analysis for the determination of depletion layer profile using Green´s functions in MESFET has been done. Then a small-signal approach to obtain the inter-electrode impedance is presented which permits the study of the slow-wave propagation in the structure. The results are compared with those of quasi-static approach. The Green´s function used in this work involves the boundary conditions on drain and source electrodes and is obtained by a conformal mapping. Thus the computation time is considerably reduced.
  • Keywords
    Equations; Impedance; MESFETs; MOSFET circuits; Network address translation; Silicon compounds; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1988. 18th European
  • Conference_Location
    Stockholm, Sweden
  • Type

    conf

  • DOI
    10.1109/EUMA.1988.333966
  • Filename
    4132654