DocumentCode
2002422
Title
Two-Dimensional Analysis of Slow-Wave Propagation in Submicronic MESFET
Author
Benghalia, A. ; Bajon, V. ; Baudrand, H.
Author_Institution
Laboratoire de microonade E.N¿.S.E.E.I.H.T.; 2, rue C. Camichel, 31071 TOULOUSE - FRANCE.
fYear
1988
fDate
12-15 Sept. 1988
Firstpage
1163
Lastpage
1168
Abstract
An accurate two-dimensional analysis for the determination of depletion layer profile using Green´s functions in MESFET has been done. Then a small-signal approach to obtain the inter-electrode impedance is presented which permits the study of the slow-wave propagation in the structure. The results are compared with those of quasi-static approach. The Green´s function used in this work involves the boundary conditions on drain and source electrodes and is obtained by a conformal mapping. Thus the computation time is considerably reduced.
Keywords
Equations; Impedance; MESFETs; MOSFET circuits; Network address translation; Silicon compounds; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1988. 18th European
Conference_Location
Stockholm, Sweden
Type
conf
DOI
10.1109/EUMA.1988.333966
Filename
4132654
Link To Document