DocumentCode
2002459
Title
A Time-Domain Large-Signal Analysis of GaAs MESFET Devices Incorporating Frequency-Domain Expression for Termination Voltages (Voltage Substitution Method)
Author
Akaike, Masami
Author_Institution
NTT Radio Communication Systems Laboratories, 1-2356 Take, Yokosuka-shi, Kanagawa-ken, 238-03 Japan
fYear
1988
fDate
12-15 Sept. 1988
Firstpage
1175
Lastpage
1182
Abstract
A nonlinear large-signal analysis is proposed, in which different impedances are connected to the external circuits for different frequencies. Analysis of the performance characteristics of frequency doublers, high-efficiency amplifiers, and degenerate amplifiers using GaAs MESFET´s is shown.
Keywords
Circuits; Differential equations; FETs; Frequency domain analysis; Gallium arsenide; Impedance; MESFETs; Power harmonic filters; Time domain analysis; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1988. 18th European
Conference_Location
Stockholm, Sweden
Type
conf
DOI
10.1109/EUMA.1988.333968
Filename
4132656
Link To Document