DocumentCode
20026
Title
Development of a Model for a Microwave GaInP/GaAs HBT
Author
Ross, Tyler N. ; Cormier, Gabriel ; Wight, Jim S.
Author_Institution
Dept. of Electron., Carleton Univ., Ottawa, ON, Canada
Volume
16
Issue
1
fYear
2015
fDate
Feb. 2015
Firstpage
104
Lastpage
110
Abstract
This article presents the development of a nonlinear model for a microwave gallium indium phosphide (GaInP)/gallium arsenide (GaAs) heterojunction bipolar transistor (HBT). This model tied for first prize in the Microwave Transistor Modeling student competition held during the 2014 IEEE Microwave Theory and Techniques Society International Microwave Symposium (IMS2014) in Tampa, Florida.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; semiconductor device models; 2014 IEEE Microwave Theory and Techniques Society International Microwave Symposium; Florida; GaInP-GaAs; IMS2014; Tampa; gallium arsenide; gallium indium phosphide; heterojunction bipolar transistor; microwave GaInP-GaAs HBT; microwave transistor modeling; student competition; Capacitance; Current measurement; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit modeling; Temperature measurement;
fLanguage
English
Journal_Title
Microwave Magazine, IEEE
Publisher
ieee
ISSN
1527-3342
Type
jour
DOI
10.1109/MMM.2014.2367867
Filename
7010395
Link To Document