Title :
Development of a Model for a Microwave GaInP/GaAs HBT
Author :
Ross, Tyler N. ; Cormier, Gabriel ; Wight, Jim S.
Author_Institution :
Dept. of Electron., Carleton Univ., Ottawa, ON, Canada
Abstract :
This article presents the development of a nonlinear model for a microwave gallium indium phosphide (GaInP)/gallium arsenide (GaAs) heterojunction bipolar transistor (HBT). This model tied for first prize in the Microwave Transistor Modeling student competition held during the 2014 IEEE Microwave Theory and Techniques Society International Microwave Symposium (IMS2014) in Tampa, Florida.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; semiconductor device models; 2014 IEEE Microwave Theory and Techniques Society International Microwave Symposium; Florida; GaInP-GaAs; IMS2014; Tampa; gallium arsenide; gallium indium phosphide; heterojunction bipolar transistor; microwave GaInP-GaAs HBT; microwave transistor modeling; student competition; Capacitance; Current measurement; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit modeling; Temperature measurement;
Journal_Title :
Microwave Magazine, IEEE
DOI :
10.1109/MMM.2014.2367867
