Title :
Microwave Heterojunction Devices
Author_Institution :
Microelectronics Research Laboratories, NEC Corporation, 4-1-1 Miyazaki Miyamae-ku, Kawasaki, 213 Japan
Abstract :
High quality heterostructures, especially of compound semiconductors have realized superior performance microwave and millimeterwave devices to GaAs MESFETs. Activities on such heterojunction devices in Japan are reviewed and discussed. The works on modulation-doped heterostructure devices, hetero MISFETs, hetero junction bipolar transistors(HBTs) and quantum effect devices are presented.
Keywords :
Electron mobility; Epitaxial layers; FETs; Gallium arsenide; HEMTs; Heterojunctions; Microwave devices; Noise measurement; Noise reduction; Satellite broadcasting;
Conference_Titel :
Microwave Conference, 1989. 19th European
Conference_Location :
London, UK
DOI :
10.1109/EUMA.1989.334147
