• DocumentCode
    2003121
  • Title

    High Efficiency Pulsed GaAs-Pin-Diodes at Millimetre-Wave Frequencies

  • Author

    Huber, S.

  • Author_Institution
    Lehrstuhl fÿr Allgemeine Elektrotechnik und Angewandte Elektronik, Technische Universitÿt Mÿnchen, Arcisstr. 21, 8000 Mÿnchen 2
  • fYear
    1989
  • fDate
    4-7 Sept. 1989
  • Firstpage
    211
  • Lastpage
    218
  • Abstract
    MBE-material is used to fabricate GaAs PIN avalanche-diodes for millimetre-wave applications. The rf-measurements are carried out under pulsed condition. Maximum output power of 15 W and maximum efficiency of 11.1% could be realized at V-band frequencies.
  • Keywords
    Breakdown voltage; Diodes; Doping; Fabrication; Frequency; Gallium arsenide; Gold; Impedance; Oscillators; Power generation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1989. 19th European
  • Conference_Location
    London, UK
  • Type

    conf

  • DOI
    10.1109/EUMA.1989.334163
  • Filename
    4132687
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2003121