Title :
Power handling and related frequency scaling advantages in piezoelectric AlN contour-mode MEMS resonators
Author :
Zuo, Chengjie ; Rinaldi, Matteo ; Piazza, Gianluca
Author_Institution :
Dept. of Electr. & Syst. Eng., Univ. of Pennsylvania, Philadelphia, PA, USA
Abstract :
This paper reports on the analytical modeling and experimental verification of the mechanically-limited power handling and nonlinearity in piezoelectric aluminum nitride (AlN) contour-mode resonators (CMR) having different electrode configurations (thickness field excitation, lateral field excitation, one-port and two-port configurations) and operating at different frequencies (177-3047 MHz). Despite its simplicity, the one-dimensional analytical model fits the experimental behavior of AlN CMRs in terms of power handling capabilities. The model and experiment also confirm the advantage of scaling (i.e. miniaturizing) the AlN CMRs to higher frequencies at which higher critical power density can be more easily attained up to values in excess of 10 ¿W/¿m3.
Keywords :
aluminium compounds; crystal resonators; micromechanical resonators; 1D analytical model; AlN; AlN CMR; analytical modeling; electrode configurations; experimental verification; frequency scaling advantages; nonlinearity; piezoelectric AlN contour-mode MEMS resonators; piezoelectric aluminum nitride; power handling; Aluminum nitride; Electrodes; Electrostatics; Frequency; Impedance; Material properties; Micromechanical devices; Piezoelectric devices; Surface acoustic wave devices; Surface acoustic waves; AlN contour-mode resonator; frequency scaling; microelectromechanical systems (MEMS); nonlinearity; power handling;
Conference_Titel :
Ultrasonics Symposium (IUS), 2009 IEEE International
Conference_Location :
Rome
Print_ISBN :
978-1-4244-4389-5
Electronic_ISBN :
1948-5719
DOI :
10.1109/ULTSYM.2009.5441932