• DocumentCode
    2003145
  • Title

    High Power and High Efficiency GaAs FETs in C Band

  • Author

    Sakamoto, S. ; Sonoda, T. ; Ikeda, Y. ; Kasai, N. ; Sakayori, T. ; Igi, S. ; Yamanouchi, M. ; Takamiya, S. ; Kashimoto, Y.

  • Author_Institution
    Kita-itami works, Mitsubishi Electric Corporation, Hyogo, Japan
  • fYear
    1989
  • fDate
    4-7 Sept. 1989
  • Firstpage
    225
  • Lastpage
    230
  • Abstract
    An internally matched high power and high efficiency GaAs FET combined with four FET chips has been developed with an output power of 20 W (PldB) and 39% power-added efficiency around 4 GHz. This excellent result was achieved mainly by the introduction of the stepped gate recess combined with the refractory metal Schottky contact which can increase simultaneously the breakdown voltage and maximum channel current.
  • Keywords
    Gallium arsenide; High power amplifiers; Microwave FETs; Microwave amplifiers; Optical refraction; Power generation; Radio frequency; Schottky barriers; Solid state circuits; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1989. 19th European
  • Conference_Location
    London, UK
  • Type

    conf

  • DOI
    10.1109/EUMA.1989.334165
  • Filename
    4132689
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2003145