• DocumentCode
    2003169
  • Title

    Influence of cell structure on the SEU sensitivity of a SRAM

  • Author

    Bion, T. ; Corbiere, T. ; Musseau, O.

  • Author_Institution
    MATRA MHS, Nantes, France
  • fYear
    1993
  • fDate
    13-16 Sep 1993
  • Firstpage
    560
  • Lastpage
    562
  • Abstract
    We have experimentally studied the single event upset sensitivity of CMOS on an epilayer 64 Kbit SRAM test vehicle. The device cross sections have been measured using accelerator beams and we have investigated the influence of the memory cell structure on the asymptotic cross section
  • Keywords
    CMOS integrated circuits; SRAM chips; integrated circuit testing; ion beam effects; radiation hardening (electronics); 64 kB/s; CMOS; SEU sensitivity; SRAM; SRAM test vehicle; accelerator beams; asymptotic cross section; cell structure; device cross sections; epilayer; memory cell structure; single event upset sensitivity; CMOS technology; Circuit testing; Feedback; Geometry; MOS devices; Particle beams; Radiation hardening; Random access memory; Single event upset; Vehicles;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and its Effects on Components and Systems, 1993.,RADECS 93., Second European Conference on
  • Conference_Location
    St. Malo
  • Print_ISBN
    0-7803-1793-9
  • Type

    conf

  • DOI
    10.1109/RADECS.1993.316520
  • Filename
    316520
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2003169