Title :
Influence of cell structure on the SEU sensitivity of a SRAM
Author :
Bion, T. ; Corbiere, T. ; Musseau, O.
Author_Institution :
MATRA MHS, Nantes, France
Abstract :
We have experimentally studied the single event upset sensitivity of CMOS on an epilayer 64 Kbit SRAM test vehicle. The device cross sections have been measured using accelerator beams and we have investigated the influence of the memory cell structure on the asymptotic cross section
Keywords :
CMOS integrated circuits; SRAM chips; integrated circuit testing; ion beam effects; radiation hardening (electronics); 64 kB/s; CMOS; SEU sensitivity; SRAM; SRAM test vehicle; accelerator beams; asymptotic cross section; cell structure; device cross sections; epilayer; memory cell structure; single event upset sensitivity; CMOS technology; Circuit testing; Feedback; Geometry; MOS devices; Particle beams; Radiation hardening; Random access memory; Single event upset; Vehicles;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1993.,RADECS 93., Second European Conference on
Conference_Location :
St. Malo
Print_ISBN :
0-7803-1793-9
DOI :
10.1109/RADECS.1993.316520
