DocumentCode
2003292
Title
The effects of ion track structure in simulating single event phenomena
Author
Dussault, H. ; Howard, J.W., Jr. ; Block, R.C. ; Pinto, M.R. ; Stapor, W.J. ; Knudson, A.R.
Author_Institution
Dept. of Nucl. Eng. & Eng. Phys., Rensselaer Polytech. Inst., Troy, NY, USA
fYear
1993
fDate
13-16 Sep 1993
Firstpage
509
Lastpage
516
Abstract
This paper describes a first order model for simulating single event phenomena using a three-dimensional device simulator. The importance of track structure effects and linear energy transfer (LET) in determining device transient current and charge collection is demonstrated
Keywords
ion beam effects; radiation hardening (electronics); semiconductor device models; semiconductor diodes; simulation; transients; 3D device simulator; LET; charge collection; device transient current; first order model; ion track structure; linear energy transfer; single event phenomena; track structure effects; Analytical models; Computational modeling; Computer simulation; Discrete event simulation; Laboratories; Semiconductor materials; Semiconductor process modeling; Solid modeling; Testing; Transient analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and its Effects on Components and Systems, 1993.,RADECS 93., Second European Conference on
Conference_Location
St. Malo
Print_ISBN
0-7803-1793-9
Type
conf
DOI
10.1109/RADECS.1993.316524
Filename
316524
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