Title :
The temperature depedence of quantum optical transition properties of GaN and GaAs in a infinite square well potential system
Author :
Lee, S.H. ; Sug, J.Y. ; Choi, J.Y. ; Sa-Gong, G. ; Lee, J.T.
Author_Institution :
Dept. of the Electr. Eng., Donga Univ., Busan, South Korea
Abstract :
We investigated theoretically the quantum optical transition properties of qusi 2-Dinensinal Landau splitting system, in GaN and GaAs. We apply the Quantum Transport theory (QTR) to the system in the confinement of electrons by square well confinement potential. We use the projected Liouville equation method with Equilibrium Average Projection Scheme (EAPS). In order to analyze the quantum transition, we compare the temperature and the magnetic field dependencies of the QTLW and the QTLS on two transition processes, namely, the phonon emission transition process and the phonon absorption transition process.
Keywords :
III-V semiconductors; Landau levels; absorption; emission; gallium arsenide; gallium compounds; phonons; wide band gap semiconductors; 2-dimensional Landau splitting system; GaAs; GaN; Liouville equation; electron confinement; equilibrium average projection scheme; infinite square well potential system; phonon absorption transition; phonon emission transition; quantum optical transition properties; quantum transport theory; square well confinement potential; temperature dependence; Electron optics; Equations; Gallium arsenide; Gallium nitride; Magnetic confinement; Phonons; Potential well; Protection switching; Quantum mechanics; Temperature; GaN and GaAs; cyclotron resonance; electron phonon coupling system; equilibrium average projection scheme (EAPS); quantum transport theory; response formula and the scattering factor formula; the quantum transition line shapes(QTLS) and the quantum transition line widths(QTLW);
Conference_Titel :
Ultrasonics Symposium (IUS), 2009 IEEE International
Conference_Location :
Rome
Print_ISBN :
978-1-4244-4389-5
Electronic_ISBN :
1948-5719
DOI :
10.1109/ULTSYM.2009.5441960
