Title :
A comparative study of three-phase dual active bridge topologies and their suitability for D-Q mode control
Author :
Tripathi, Awneesh K. ; Hatua, Kamalesh ; Bhattacharya, Subhashish
Author_Institution :
Electr. & Comput. Eng., NCSU, Raleigh, NC, USA
Abstract :
A comparative evaluation of three different three-phase Dual Active Bridge (DAB) topologies with a 15-kV Si-IGBT based three-level converter at the high-voltage side and 1200-V SiC-MOSFET based converters in three different arrangements at the low-voltage side are compared. The proposed DABs are an integral part of a solid state transformer which connects a 13.8-kV distribution grid and a 480-V utility grid. The three-level converters connected at the high-voltage side in each topology with 30° zero-enforcing and proposed arrangements at low-voltage side of the high frequency-link transformer help to reduce dominant harmonic currents. Thus harmonic-free currents in the high frequency link transformer are achieved without pulse-width modulation which can be utilized for D-Q Mode smooth-control.
Keywords :
MOSFET; insulated gate bipolar transistors; power convertors; silicon compounds; wide band gap semiconductors; D-Q mode control; IGBT based three-level converter; MOSFET based converters; harmonic-free currents; high frequency link transformer; high-voltage side; solid state transformer; three-phase dual active bridge topologies; voltage 1200 V; voltage 13.8 V; voltage 15 kV; Bridge circuits; Harmonic analysis; MOSFET circuits; Silicon carbide; Switches; Topology; Windings;
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2012 IEEE
Conference_Location :
Raleigh, NC
Print_ISBN :
978-1-4673-0802-1
Electronic_ISBN :
978-1-4673-0801-4
DOI :
10.1109/ECCE.2012.6342605