Neutron radiation effects in HEMTs

Author

Papaioannou, G.J. ; Papastamatiou, M. ; Arpatzanis, N. ; Dimitrakis, P. ; Papastergiou, C.

Author_Institution

Solid State Phys. Section, Athens Univ., Greece

fYear

1993

fDate

13-16 Sep 1993

Firstpage

207

Lastpage

212

Abstract

HEMTs have been irradiated with fast neutrons at fluences up to 10 ¹⁶n/cm². At large enough fluences the two dimensional electron gas vanishes and the devices turn into AlGaAs MESFETs. The majority carrier traps responsible for the degradation have been investigated. A charge control model has been introduced to simulate the shift of the threshold voltage and to determine the carrier removal rate in the AlGaAs donor layer

Keywords

III-V semiconductors; aluminium compounds; deep level transient spectroscopy; gallium arsenide; high electron mobility transistors; neutron effects; semiconductor device testing; two-dimensional electron gas; 2D electron gas; AlGaAs; AlGaAs MESFETs; AlGaAs donor layer; DLTS; HEMTs; carrier removal rate; charge control model; degradation; fast neutrons; fluences; irradiated; majority carrier traps; neutron radiation effects; threshold voltage; Degradation; Electron traps; Gallium arsenide; HEMTs; Integrated circuit noise; MESFETs; MODFETs; Microwave devices; Neutron radiation effects; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and its Effects on Components and Systems, 1993.,RADECS 93., Second European Conference on

Conference_Location

St. Malo

Print_ISBN

0-7803-1793-9

Type

conf

DOI

10.1109/RADECS.1993.316539

Filename

316539