DocumentCode :
2003993
Title :
The Enhanced Power Performance of the Dual-Fed Distributed Amplifier
Author :
Aitchison, C.S. ; Bukhari, M N ; Tang, O S A
Author_Institution :
ERA Technology Ltd, Leatherhead, UK; Brunel University, Uxbridge
fYear :
1989
fDate :
4-7 Sept. 1989
Firstpage :
439
Lastpage :
444
Abstract :
The small signal advantages of the dual-fed distributed amplifier are known (Ref.l). This paper gives practical results for the large signal behaviour showing a 3 dB improvement in the output power at 1 dB gain compression and a 7 dB improvement in the 3rd order intercept point. Two HMF-0600 MESFETs are used in the design to give 27 dBm output power over the 2 to 7 GHz band. A second version uses two higher power HMF-1200 devices to give 30 dBm output power over the 1 to 13 GHz band. Due to the use of the distributed amplifier technique, the circuits are relatively insensitive to device variations and therefore no circuit tuning is required during fabrication.
Keywords :
Circuit optimization; Distributed amplifiers; Fabrication; MESFETs; Noise figure; Performance gain; Power amplifiers; Power generation; Power measurement; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1989. 19th European
Conference_Location :
London, UK
Type :
conf
DOI :
10.1109/EUMA.1989.334002
Filename :
4132721
Link To Document :
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