Title :
Dose and neutron-fluence measurements in mixed gamma-neutron fields by means of semi-conductor dosimeters
Author :
Tavlet, M. ; Florian, M. E Leon
Author_Institution :
CERN, Geneva, Switzerland
Abstract :
Semiconductor detectors (PIN diodes and MOS transistors) were irradiated around high-energy particle-accelerators. The radiation fields contain mainly gammas and neutrons; they are characterized by means of alanine and RPL dosimeters and activation foils. PIN diodes are sensitive to neutrons, MOS transistors are sensitive to gammas; their responses are compared to the ones given after reactor- and cobalt-irradiations respectively. These comparisons show that it is possible to discriminate the gamma and the neutron components of the irradiation. The fading of the various sensors is also recorded
Keywords :
dosimeters; gamma-ray detection and measurement; insulated gate field effect transistors; neutron detection and measurement; p-i-n diodes; particle accelerators; semiconductor counters; MOS transistors; PIN diodes; RPL dosimeters; activation foils; alanine-based dosimeters; high-energy particle-accelerators; mixed gamma-neutron fields; neutron-fluence measurements; semiconductor dosimeters; sensor fading; Aging; Amino acids; Fading; Gamma ray detection; Gamma ray detectors; MOSFETs; Neutrons; Particle accelerators; Polymers; Sensor phenomena and characterization;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1993.,RADECS 93., Second European Conference on
Conference_Location :
St. Malo
Print_ISBN :
0-7803-1793-9
DOI :
10.1109/RADECS.1993.316556
