DocumentCode
2004178
Title
Electronic component response to energetic heavy ions
Author
Patin, Y. ; Lochard, J.P. ; Gosselin, G.
Author_Institution
Service de Phys. et Tech. Nucl., CEA Centre d´´etude de Bruyeres-le-Chatel, France
fYear
1993
fDate
13-16 Sep 1993
Firstpage
517
Lastpage
525
Abstract
Charge collection in electronic circuits struck by heavy ions ranging from 1 MeV/A to 600 MeV/A is experimentally studied. Data are discussed in terms of collection depth as a function of ion range and LET. Energy deposited by relativistic (>100 MeV/A) heavy ions in thin silicon detectors or in the circuits differs from the one calculated by energy loss. This effect is discussed and compared with simplified model calculations proposed by M.A. Xapsos (see IEEE Trans. Nucl. Sci, vol. NS-39, p. 1613-21, 1992)
Keywords
ion beam effects; monolithic integrated circuits; semiconductor devices; LET; Si; charge collection; collection depth; electronic circuits; electronic component response; energetic heavy ions; energy loss; ion range; model calculations; thin Si detectors; Cows; Detectors; Diodes; Electronic circuits; Electronic components; Energy loss; Resumes; Satellites; Silicon; Vents;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and its Effects on Components and Systems, 1993.,RADECS 93., Second European Conference on
Conference_Location
St. Malo
Print_ISBN
0-7803-1793-9
Type
conf
DOI
10.1109/RADECS.1993.316558
Filename
316558
Link To Document