Dependence of power MOSFET static burnout on charge distribution in the active region of IRF15O

Author

Stassinopoulos, E.G. ; Brucker, G.J. ; Calvel, P. ; Barillot, C. ; Gaillard, R. ; Gasiot, J.

Author_Institution

NASA Goddard Space Flight Center, Greenbelt, MD, USA

fYear

1993

fDate

13-16 Sep 1993

Firstpage

458

Lastpage

461

Abstract

Previous work had indicated that there was a dependence of dynamic burnout on ion energy for specific ion types, thus, on different ranges distributions of charge. This paper presents the results of a study to determine the dependence of static MOSFET burnout on range or charge distribution in the active region of the device, for the same ion types. That is, this investigation compares these static results with dynamic measurements in order to determine why their cross section ratio is a factor of 100 to 1000. The burnout voltage thresholds were determined for four energies of iodine and bromine ions. The results show that the deposited charge for burnout is about the same value for both operating conditions, however, the dependence on operating frequency or duration of the MOSFET´s off-time introduces a reduction of cross section by a large factor

Keywords

electrical faults; insulated gate field effect transistors; ion beam effects; power transistors; Br; Br ions; I; I ions; IRF15O; active region; burnout voltage thresholds; charge distribution; cross section ratio; offtime duration; operating frequency; power MOSFET; static burnout; Circuit testing; Frequency; MOSFET circuits; NASA; Passivation; Power MOSFET; Silicon; Space charge; Test facilities; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and its Effects on Components and Systems, 1993.,RADECS 93., Second European Conference on

Conference_Location

St. Malo

Print_ISBN

0-7803-1793-9

Type

conf

DOI

10.1109/RADECS.1993.316560

Filename

316560