Title :
Analysis of the time-dependent turn-on mechanism for single-event burnout of n-channel power MOSFETs
Author :
Johnson, Gregory H. ; Brews, John R. ; Schrimpf, Ronald D. ; Galloway, Kenneth F.
Author_Institution :
Phillips Lab./VTE, Kirtland AFB, NM, USA
Abstract :
For the first time, this paper investigates the time-dependent mechanisms involved in single-event burnout (SEB). SEB of power metal-oxide-semiconductor field-effect transistors (MOSFETs)is a catastrophic failure mechanism initiated by the passage of a heavy ion through the device structure. In previous work, analytical models have been developed to explain the regenerative feedback mechanism that induces second breakdown of the parasitic bipolar junction transistor (BJT). In this paper, a first order dynamic model is presented to lend insight into the turn-on of the parasitic BJT by the heavy ion
Keywords :
electric breakdown of solids; electrical faults; equivalent circuits; insulated gate field effect transistors; ion beam effects; power transistors; semiconductor device models; NMOSFET; catastrophic failure mechanism; field-effect transistors; first order dynamic model; heavy ion penetration; n-channel power MOSFETs; parasitic BJT turnon; parasitic bipolar junction transistor; regenerative feedback mechanism; second breakdown; single-event burnout; time-dependent turn-on mechanism; Analytical models; Bipolar transistors; Councils; FETs; Feedback; Forward contracts; Laboratories; MOSFETs; Turning; Voltage;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1993.,RADECS 93., Second European Conference on
Conference_Location :
St. Malo
Print_ISBN :
0-7803-1793-9
DOI :
10.1109/RADECS.1993.316562
