DocumentCode
2004273
Title
Single Event Latchup (SEL) in IDT 7187 SRAMs-dependence on ion penetration depth
Author
Levinson, J. ; Even, O. ; Adler, E. ; Hass, M. ; Ilberg, D. ; Lifshitz, Y.
Author_Institution
Soreq Nucl. Res. Center, Yavne, Israel
fYear
1993
fDate
13-16 Sep 1993
Firstpage
438
Lastpage
440
Abstract
A study of Single Event Latchup (SEL) in IDT 7187 SRAMs is reported. Two important measurements concerning heavy ion SEL were demonstrated: (i) the dependence of the SEL cross section on the ion penetration depth, (ii) the latchup current distribution which can serve for the study of latchup paths. For IDT 7187, the measurements show a sharp decrease in the SEL cross section for penetration depths below ~15 μm. The latchup current distribution reveals the existence of two main latchup paths. The importance of the present results for further studies is discussed
Keywords
CMOS integrated circuits; SRAM chips; current distribution; electrical faults; ion beam effects; CMOS static RAM; IDT 7187 SRAMs; heavy ion SEL; ion penetration depth; latchup current distribution; single event latchup; Circuits; Colliding beam accelerators; Current distribution; Current measurement; Gold; Ion accelerators; Iron; Particle accelerators; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and its Effects on Components and Systems, 1993.,RADECS 93., Second European Conference on
Conference_Location
St. Malo
Print_ISBN
0-7803-1793-9
Type
conf
DOI
10.1109/RADECS.1993.316563
Filename
316563
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