DocumentCode
2004346
Title
A new method for determining the transient photocurrent in an irradiated diode
Author
Bruguier, G. ; Pelanchon, F. ; Sudre, C. ; Moreau, Y. ; La Rochette, H.D. ; Baggio, J. ; Gasiot, J. ; Azais, B.
Author_Institution
Centre d´´Electron. de Montpellier, Univ. des Sci. et Tech. du Languedoc, Montpellier, France
fYear
1993
fDate
13-16 Sep 1993
Firstpage
420
Lastpage
424
Abstract
An analytical expression of the photocurrent in a n-p junction exposed to an ionizing radiation pulse is derived by using a specific decomposition of the minority carrier density. Modeling can be applied to any shape of actual radiation pulses, in particular with significant rise times. Comparisons with experiments and numerical resolutions have shown the validity of the modeling
Keywords
carrier density; minority carriers; photoconductivity; radiation effects; semiconductor device models; semiconductor diodes; transients; ionizing radiation pulse; irradiated diode; minority carrier density; modeling; n-p junction; transient photocurrent; Boundary conditions; Charge carrier density; Charge carrier lifetime; Diodes; Equations; Integrated circuit modeling; Ionizing radiation; Photoconductivity; Predictive models; Pulse shaping methods;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and its Effects on Components and Systems, 1993.,RADECS 93., Second European Conference on
Conference_Location
St. Malo
Print_ISBN
0-7803-1793-9
Type
conf
DOI
10.1109/RADECS.1993.316566
Filename
316566
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