ZVS range extension of 10A 15kV SiC MOSFET based 20kW Dual Active Half Bridge (DHB) DC-DC converter

Author

Wang, Gangyao ; Huang, Alex ; Li, Chushan

Author_Institution

Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA

fYear

2012

fDate

15-20 Sept. 2012

Firstpage

1533

Lastpage

1539

Abstract

SiC MOSFET is favorable for high voltage applications due to its fast switching speed, low loss and high voltage rating compared with silicon power devices. This paper presents the switching performance of 10A 15kV SiC MOSFET and analyzes its switching loss when considering the impact of parasitic capacitance. A 20 kHz 20 kW Dual Active Half Bridge (DHB) dc-dc converter based on this new device is designed with full ZVS range. Simulation and experiment results are given to validate the analysis.

Keywords

DC-DC power convertors; bridge circuits; high-voltage engineering; power MOSFET; silicon compounds; switching convertors; zero voltage switching; MOSFET; SiC; ZVS range extension; current 10 A; dual active half bridge DC-DC converter; frequency 20 kHz; high voltage applications; parasitic capacitance; power 20 kW; voltage 15 kV; voltage rating; zero voltage switching; Capacitance; DH-HEMTs; Loss measurement; MOSFET circuits; Silicon carbide; Voltage measurement; Zero voltage switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Energy Conversion Congress and Exposition (ECCE), 2012 IEEE

Conference_Location

Raleigh, NC

Print_ISBN

978-1-4673-0802-1

Electronic_ISBN

978-1-4673-0801-4

Type

conf

DOI

10.1109/ECCE.2012.6342631

Filename

6342631