An 8K×8 SRAM designed for high transient radiation tolerance

Author

Kerr, J.A. ; Wootten, D. ; Robson, N. ; Ellis, R.

Author_Institution

GEC Plessey Semicond. Ltd., Lincoln, UK

fYear

1993

fDate

13-16 Sep 1993

Firstpage

415

Lastpage

419

Abstract

This paper describes important aspects in the design and testing of the GEC Plessey Semiconductors MA9564 CMOS-SOS 8K×8 SRAM. This device was specifically designed for continuous reliable operation under high dose rate transient irradiation conditions. The device was shown to be tolerant to prompt doses in excess of 1e12 rad(Si)/sec in passive mode using the ASTERIX simulator at DGA Gramat, France. Preliminary results using an electron beam simulator indicated an upset level in excess of 8e11 rad(Si)/sec in active mode

Keywords

CMOS integrated circuits; SRAM chips; circuit reliability; electron beam effects; integrated circuit testing; radiation hardening (electronics); 64 Kbit; 8K×8; ASTERIX simulator; CMOS SOS SRAM; GEC Plessey Semiconductors; MA9564; Si-Al₂O₃; active mode; continuous reliable operation; electron beam simulator; high dose rate; passive mode; static RAM; testing; transient radiation tolerance; Circuit testing; Coaxial cables; Current transformers; EMP radiation effects; Lead; Packaging; Power supplies; Random access memory; Semiconductor device testing; Variable structure systems;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and its Effects on Components and Systems, 1993.,RADECS 93., Second European Conference on

Conference_Location

St. Malo

Print_ISBN

0-7803-1793-9

Type

conf

DOI

10.1109/RADECS.1993.316567

Filename

316567