Comparative evolution of various CCD image sensors hardening techniques with ionizing radiation

Author

Caranhac, Sophie ; Coutures, Jean-Louis

Author_Institution

Semicond. Specifiques, Thomson-CSF, Saint-Egreve, France

fYear

1993

fDate

13-16 Sep 1993

Firstpage

396

Lastpage

400

Abstract

This paper reviews various techniques to harden Charge Coupled Device (CCD) sensors and the results after irradiation of three Thomson n buried channel CCDs having a different degree of hardening. It describes the major irradiation effects on CCD performances and it makes a comparison of the results between the different hardening levels. It shows good results on dark voltage after ionizing radiation for TH 7863M device hardened both by design and by operating conditions (MPP mode) with respect to the standard device TH 7863A. The irradiations were performed with ⁶⁰Co or X-ray (10 keV) sources on devices in operating mode

Keywords

CCD image sensors; X-ray effects; gamma-ray effects; integrated circuit testing; radiation hardening (electronics); 10 keV; CCD image sensors; Co; TH 7863M device; Thomson n buried channel CCDs; X-ray sources; dark voltage; gamma sources; hardening levels; ionizing radiation; irradiation effects; operating conditions; radiation hardening techniques; Aluminum; Charge coupled devices; Charge-coupled image sensors; Dark current; Interface states; Ionizing radiation; Radiation hardening; Signal generators; Space technology; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and its Effects on Components and Systems, 1993.,RADECS 93., Second European Conference on

Conference_Location

St. Malo

Print_ISBN

0-7803-1793-9

Type

conf

DOI

10.1109/RADECS.1993.316570

Filename

316570