A Fully Automated On-Wafer Pulsed Measurement System, with Variable Pulse-Length and Duty Cycle, for Accurate Large Signal FET Modeling

We present in this paper an on wafer fully-automated pulsed-measurement system allowing to extract automatically the characteristics of the non-linear current generators of a FET in function of the gate to source (Vgs) and drain to source (Vds) voltages. The measurement-system is coupled to a data-processing sofware which includes a fitting algorithm. Measurements may be performed for different pulsawidths and duty-cycles, in view of modelling the trapping effects. Finally by performing the measurements at different temperatures, this parameter may be taken into account in the non-linear FET model. Note that the automated on-wafer measurements will allow to perform statistical analysis and then will facilitate the determination of an averaged FET non-linear equivalent-circuit for every wafer processed.