Assessment of quantum yield experiments via full band Monte Carlo simulations

Author

Ghetti, A. ; Alam, M.A. ; Bude, J. ; Venturi, F.

Author_Institution

Lucent Technol., AT&T Bell Labs., Murray Hill, NJ, USA

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

873

Lastpage

876

Abstract

In this paper we present an in-depth analysis of Quantum Yield (QY) data by means of Full Band Monte Carlo (FBMC) simulation including data from stressed oxides. The effect of device structure and initial energy distribution on QY efficiency is explored and the consequences of oxide stress on QY data are analyzed. In particular, we show that: (a) there is universal shape for QY curves in fresh oxides independent of oxide thickness and substrate doping; (b) QY data can be used to gain important insight into possible Stress Induced Leakage Current (SILC) mechanisms and discriminate between different SILC models.

Keywords

Monte Carlo methods; carrier relaxation time; leakage currents; semiconductor device models; simulation; tunnelling; MOSFET; SILC mechanisms; SILC models; device structure; full band Monte Carlo simulations; initial energy distribution; quantum yield experiments; stress induced leakage current; stressed oxide data; Analytical models; Charge carrier processes; Computational modeling; Data analysis; Electric breakdown; Electron traps; MOSFET circuits; Particle scattering; Silicon; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.650519

Filename

650519