DocumentCode
2005504
Title
A Mesfet Sampler with 20 Picosecond Step Response Time
Author
Hafdallah, H. ; Vernet, G. ; Adde, R.
fYear
1989
fDate
4-7 Sept. 1989
Firstpage
827
Lastpage
832
Abstract
A picosecond GaAs MESFET sampling gate employing a NEC710 as a resistive switch is designed and tested in hybrid technology. The 10-90% transition duration of the step response is 22ps. The dynamic operation is studied with a precise determination of transmitted and reflected picosecond waveforms at the different ports of the circuit during the capture of a single sample. Experimental results are analyzed using full time domain simulation of the circuit including propagation effects, measurement equipment responses.
Keywords
Analytical models; Circuit simulation; Circuit testing; Delay; Gallium arsenide; MESFETs; Sampling methods; Switches; Time domain analysis; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1989. 19th European
Conference_Location
London, UK
Type
conf
DOI
10.1109/EUMA.1989.334070
Filename
4132782
Link To Document