A unified substrate current model for weak and strong impact ionization in sub-0.25 /spl mu/m NMOS devices

Author

Ramaswamy, S. ; Amerasekera, A. ; Chang, M.-C.

Author_Institution

Semicond. Process & Device Center, Texas Instrum. Inc., Dallas, TX, USA

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

885

Lastpage

888

Abstract

We have developed a new unified substrate current model for weak and strong impact-ionization. The model which is semi-empirical is able to capture non-local field effects. The importance of this model is its simplicity requiring three parameters which can be extracted easily from a single wafer-level measurement. The implementation of this model in a circuit simulator provides the capability to include hot-carrier and ESD effects into circuit design optimization, which is essential for achieving design-in-reliability targets.

Keywords

MOSFET; circuit analysis computing; electric current; electrostatic discharge; hot carriers; impact ionisation; semiconductor device models; 0.25 micron; ESD effects; NMOS devices; circuit design optimization; circuit simulator; hot-carrier effects; nonlocal field effects; semiempirical model; strong impact ionization; submicron devices; unified substrate current model; weak impact ionization; Circuit simulation; Electrostatic discharge; Hot carriers; Impact ionization; MOS devices; MOSFETs; Semiconductor device modeling; Semiconductor process modeling; Substrates; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.650523

Filename

650523