• DocumentCode
    2006731
  • Title

    Hot Carrier Degradation Mechanism Under Pulsed Stress in Mosfets

  • Author

    Nagai, R. ; Umeda, K. ; Takeda, E.

  • Author_Institution
    Central Research Laboratory, Japan
  • fYear
    1991
  • fDate
    28-30 May 1991
  • Firstpage
    15
  • Lastpage
    16
  • Keywords
    Acceleration; Channel hot electron injection; Degradation; Drain avalanche hot carrier injection; Frequency; Gold; Hot carriers; MOSFETs; Stress; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on
  • Conference_Location
    Oiso, Japan
  • Type

    conf

  • DOI
    10.1109/VLSIT.1991.705967
  • Filename
    705967
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2006731