Title :
Thermoelectric figure of merit enhancement in Si and SiGe quantum wires due to spatial confinement of acoustic phonons
Author :
Khitun, A. ; Balandin, A. ; Wang, K.L. ; Chen, G.
Author_Institution :
Device Res. Lab., California Univ., Los Angeles, CA, USA
fDate :
Aug. 29 1999-Sept. 2 1999
Abstract :
Thermoelectric figure of merit of Si and SiGe quantum wires was theoretically investigated rigorously taking into account spatial confinement of both electrons and phonons. The calculations were carried out for cylindrical quantum wires with radius 1.5 nm
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Keywords :
Ge-Si alloys; carrier mobility; electron-phonon interactions; elemental semiconductors; semiconductor quantum wires; silicon; thermal conductivity; thermoelectric power; 1.5 to 15 nm; Si; SiGe; acoustic phonons spatial confinement; carrier mobility; infinite potential barriers; lattice thermal conductivity; phonon relaxation rates; quantum wires; thermoelectric figure of merit; Carrier confinement; Electrons; Germanium silicon alloys; Lattices; Phonons; Quantum mechanics; Silicon germanium; Thermal conductivity; Thermoelectricity; Wires;
Conference_Titel :
Thermoelectrics, 1999. Eighteenth International Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-5451-6
DOI :
10.1109/ICT.1999.843363
