Title :
Bi substitution effects on Sb/sub 2/Te/sub 3/ thin films
Author :
Kim, Yunki ; Cho, Sunglae ; DiVenere, Antonio ; Wong, George K. ; Ketterson, J.B. ; Meyer, Jerry R.
Author_Institution :
Dept. of Phys. & Astron., Northwestern Univ., Evanston, IL, USA
fDate :
Aug. 29 1999-Sept. 2 1999
Abstract :
We have investigated the structural and thermoelectric properties of (Sb/sub 1-x/Bi/sub x/)/sub 2/Te/sub 3/ MBE grown thin films on CdTe(111). Analysis of X-ray diffraction patterns (/spl theta/-2/spl theta/ scans and rocking curves) of the films shows that they are of high quality and that they are well aligned with their (00.l) axis normal to the substrates. Measurements of the temperature-dependent thermoelectric power of the films were performed with respect to the binary composition of Sb and Bi, x. For the samples in the range 0.2\n\n\t\t
Keywords :
Hall effect; antimony compounds; bismuth compounds; carrier density; electrical resistivity; semiconductor thin films; thermoelectric power; (Sb/sub 1-x/Bi/sub x/)/sub 2/Te/sub 3/; (SbBi)/sub 2/Te/sub 3/; Hall coefficient; MBE; Sb/sub 2/Te/sub 3/:Bi; Sb/sub 2/Te/sub 3/:Bi thin films; X-ray diffraction patterns; room temperature carrier concentrations; structure; temperature-dependent resistivity; temperature-dependent thermoelectric power; thermoelectric properties; Bismuth; Molecular beam epitaxial growth; Pattern analysis; Performance evaluation; Tellurium; Temperature distribution; Temperature measurement; Thermoelectricity; Transistors; X-ray diffraction;
Conference_Titel :
Thermoelectrics, 1999. Eighteenth International Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-5451-6
DOI :
10.1109/ICT.1999.843364
