Title : 
Optimization of the thermoelectric properties of low-dimensional structures via phonon engineering
         
        
            Author : 
Balandin, A. ; Khitun, A. ; Liu, J.L. ; Wang, K.L. ; Borca-Tasciuc, T. ; Chen, G.
         
        
            Author_Institution : 
Dept. of Electr. Eng., California Univ., Riverside, CA, USA
         
        
        
            fDate : 
Aug. 29 1999-Sept. 2 1999
         
        
        
        
            Abstract : 
We report the first direct observation of confined acoustic phonon modes in a single semiconductor thin film. High-resolution Raman spectroscopy of ultra-thin silicon-on-insulator (SOI) structures reveals multiple quasi-equidistant peaks in the spectral range from 50 cm/sup -1/ to 160 cm/sup -1/. Confined nature of phonon transport in low-dimensional structures with the finite acoustic mismatch indicates an additional tuning capability for optimizing of thermoelectric properties of these structures. Our experimental results are consistent with the recent theoretical predictions of the strong decrease of the lateral lattice thermal conductivity due to phonon confinement.
         
        
            Keywords : 
Raman spectra; electron-phonon interactions; silicon-on-insulator; thermal conductivity; thermoelectric power; Raman spectroscopy; Si; confined acoustic phonon modes; finite acoustic mismatch; lateral lattice thermal conductivity; low-dimensional structures; phonon confinement; phonon engineering; phonon transport; single semiconductor thin film; thermoelectric properties; tuning capability; ultra-thin silicon-on-insulator structures; Acoustic materials; Laboratories; Phonons; Polymer films; Semiconductor films; Semiconductor materials; Semiconductor superlattices; Semiconductor thin films; Thermal conductivity; Thermoelectricity;
         
        
        
        
            Conference_Titel : 
Thermoelectrics, 1999. Eighteenth International Conference on
         
        
            Conference_Location : 
Baltimore, MD, USA
         
        
        
            Print_ISBN : 
0-7803-5451-6
         
        
        
            DOI : 
10.1109/ICT.1999.843365