Title :
Voltage and Temperature Dependence of Interface Trap Generation by Hot Electrons in P- and N- Poly Gated MOSFETs
Author :
Hsu, C.C.-H. ; Ning, T.H.
Author_Institution :
IBM Research Div., T.J. Watson Research Center, NY
Keywords :
Annealing; Charge carrier processes; Electron traps; MOSFET circuits; Secondary generated hot electron injection; Silicon; Stress; Temperature dependence; Threshold voltage; Voltage control;
Conference_Titel :
VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on
Conference_Location :
Oiso, Japan
DOI :
10.1109/VLSIT.1991.705968
