DocumentCode
2007070
Title
A 2-20GHz Gaas MESFET Variable Attenuator using a Single Positive External Drive Voltage
Author
Sun, Horng Jye ; Wu, Wang ; Ewan, James
Author_Institution
Teledyne Monolithic Micriwave, 1274 Terra Bella Ave., Mountain View, California, USA
fYear
1989
fDate
4-7 Sept. 1989
Firstpage
1270
Lastpage
1275
Abstract
A GaAs MESFET monolithic variable attenuator has been developed covering 2-20GHz bandwidth. A novel DC biasing and control scheme, by applying control voltage to the gate as well as the drain/source nodes of the MESFETs, allows the biasing and control of the IC through a single positive external voltage source combined with a variable voltage divider. The attenuation is variable from 2.4dB to 14.0dB, at 20GHz. The attenuation flatness versus frequency is within +¿0.5dB, and the input and output VSWRs are less than 2:1, over the entire frequency and control range.
Keywords
Attenuation; Attenuators; Bandwidth; Circuits; FETs; Frequency; Gallium arsenide; MESFETs; Power supplies; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1989. 19th European
Conference_Location
London, UK
Type
conf
DOI
10.1109/EUMA.1989.334010
Filename
4132853
Link To Document