Low-Noise GaAs Monolithic L-Bahd B/D-Amplipibrs with Low Power Consumption

This paper describes the design and performance of GaAs monolithic L-band amplifiers with low power consumption. The amplifiers have been fabricated by using 1-¿m enhancement/depletion mode (E/D) technology. One amplifier has 11 dB gain and a noise figure of 3 dB max. at 1 GHz with DC-power consumption below 50 mW. A second amplifier has 14 dB gain and a noise figure of 3.8 dB at 1 GHz with 60-mW power consumption. It uses a novel biasing scheme with good DC performance. The operating current and then also the gain of the amplifier can be varied. With only 25-mW DC-power consumption it can still provide a gain of 11 dB at 1 GHz.