Title : 
Shape effect of resistance and thermoelectric power for BiSb in a magnetic field
         
        
            Author : 
Hasegawa, Y. ; Okumura, H. ; Kondo, N. ; Shuto, N. ; Yamaguchi, Satarou ; Sato, N.
         
        
            Author_Institution : 
Ion Eng. Res. Inst. Corp., Hirakata, Japan
         
        
        
            fDate : 
Aug. 29 1999-Sept. 2 1999
         
        
        
        
            Abstract : 
The measurement of the Seebeck coefficient and resistivity was performed for a direction of the axis of the single crystal of bismuth-antimony in a magnetic field. The magnetic field effects were observed experimentally. We calculated the shape effects on the sample of the magnetic field using a two-dimensional computer code; effects studied included the Hall effect, thermoelectric effect, Nernst effect, and the Leduc-Righi effect. Considering phenomenological equations, we compared experimental results utilizing single crystal bismuth-antimony and calculations. The results are in good agreement between 0 and 4 Tesla. It is thus shown both by experiment and calculation that the electrode shape of the thermoelectric element causes variation in the Seebeck coefficient and resistivity.
         
        
            Keywords : 
Hall effect; Seebeck effect; bismuth compounds; electrical resistivity; semiconductor materials; thermoelectric power; thermomagnetic effects; BiSb; Hall effect; Leduc-Righi effect; Nernst effect; Seebeck coefficient; magnetic field effects; resistivity; shape effects; single crystal; thermoelectric effect; thermoelectric element; thermoelectric power; two-dimensional computer code; Conductivity; Electrical resistance measurement; Electrodes; Equations; Hall effect; Magnetic field measurement; Performance evaluation; Shape; Thermal resistance; Thermoelectricity;
         
        
        
        
            Conference_Titel : 
Thermoelectrics, 1999. Eighteenth International Conference on
         
        
            Conference_Location : 
Baltimore, MD, USA
         
        
        
            Print_ISBN : 
0-7803-5451-6
         
        
        
            DOI : 
10.1109/ICT.1999.843378