Title :
An ultra low-power RF bipolar technology on glass
Author :
Dekker, R. ; Baltus, P. ; van Deurzen, M. ; Einden, W.v.d. ; Maas, H. ; Wagemans, A.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
We present a new technology, SOA (Silicon-On-Anything) to transfer circuits processed on SOI substrates to another substrate, e.g. glass or alumina. We have used this technology to integrate an ultra low-power bipolar high-frequency process with high-quality passive components including spiral inductors. Circuits with record low-power RF performance are demonstrated.
Keywords :
bipolar analogue integrated circuits; inductors; integrated circuit technology; silicon-on-insulator; SOA technology; SOI substrate; Si-Al/sub 2/O/sub 3/; Silicon-On-Anything; alumina; glass; high-frequency process; passive component; spiral inductor; ultra low-power RF bipolar circuit; Capacitance; Circuit testing; Energy consumption; Fabrication; Glass; Inductors; Integrated circuit interconnections; Radio frequency; Silicon; Spirals;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650531
