DocumentCode

2007374

Title

Structure Dependence of the Hot-Carrier Degraded Region in Deep Submicron MOS Devices

Author

Harnada, A. ; Takeda, E.

Author_Institution

Central Research Laboratory, Japan

fYear

1991

fDate

28-30 May 1991

Firstpage

21

Lastpage

22

Keywords

Circuit synthesis; Degradation; Gold; Hot carrier injection; Hot carriers; Laboratories; MOS devices; MOSFETs; Stress; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on

Conference_Location

Oiso, Japan

Type

conf

DOI

10.1109/VLSIT.1991.705970

Filename

705970