DocumentCode
2007489
Title
Characterization of 4.5 kV–5.5 kA IGCTs within a medium voltage 3L-ANPC phase leg
Author
Andler, Daniel ; Álvarez, Rodrigo ; Bernet, Steffen ; Rodríguez, José
Author_Institution
Elektrotech. Inst., Tech. Univ. Dresden, Dresden, Germany
fYear
2012
fDate
15-20 Sept. 2012
Firstpage
451
Lastpage
458
Abstract
In 3L-ANPC VSCs the application of additional active switches inverse to the NPC diodes enable additional switching states and commutations. They are used to overcome one important disadvantage of the 3L-NPC VSC - the unequal distribution of semiconductor losses. With an accurate switching model (obtained directly from the measurements) it is possible to improve the junction temperature distribution among the power devices, increasing the output power and/or increasing the frequency and/or decreasing the derating of the converter. This paper presents the characterization of a 4.5 kV-5.5 kA IGCT within a 3L-ANPC phase leg. A quantitative analysis of the switching losses using 5SHY55L4500 IGCTs and D1961SH45T presspack diodes for a current range from 1 kA to 5 kA and junction temperatures between 25°C and 125°C is presented. The 3L-ANPC phase leg performs 32 different commutations. Each commutation exhibit slight differences in the switching losses as a result of asymmetries in the different commutation paths. The switching loss deviation is quantified and finally, a switching loss model is presented.
Keywords
commutation; power semiconductor diodes; switching convertors; temperature distribution; thyristor applications; 3L-ANPC VSC; 5SHY55L4500 IGCT; D1961SH45T presspack diodes; IGCT characterization; NPC diodes; active switches; commutation paths; current 1 kA to 5 kA; current 5.5 kA; integrated gate commutated thyristor; junction temperature distribution; medium voltage 3L-ANPC phase leg; power devices; semiconductor losses; switching loss deviation model; switching states; temperature 25 degC to 125 degC; three-level active NPC voltage source converter; voltage 4.5 kV; Capacitors; Clamps; Current measurement; Inductance; Semiconductor diodes; Switching loss; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Energy Conversion Congress and Exposition (ECCE), 2012 IEEE
Conference_Location
Raleigh, NC
Print_ISBN
978-1-4673-0802-1
Electronic_ISBN
978-1-4673-0801-4
Type
conf
DOI
10.1109/ECCE.2012.6342786
Filename
6342786
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